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Volumn 13, Issue 3, 2000, Pages 459-465
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Poly(α-methyl-p-hydroxystyrene-co-methacrylonitrile) based single-layer resists for VUV lithography: (1) Synthesis, properties and photochemistry
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Author keywords
157 nm Resist; Photoresist; VUV lithography
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Indexed keywords
4 HYDROXYSTYRENE;
ACRYLONITRILE;
COPOLYMER;
HYDROGEN;
METHACRYLONITRILE;
METHYL GROUP;
POLY(ALPHA METHYL 4 HYDROXYSTYRENE CO METHACRYLONITRILE);
STYRENE DERIVATIVE;
SULFONIUM DERIVATIVE;
TERT BUTOXYCARBONYLOXY ALPHA METHYLSTYRENE;
TERT BUTOXYCARBONYLOXYSTYRENE;
TRIMETHYLAMMONIUM SALT DERIVATIVE;
TRIPHENYLSULFONIUM TRIFLATE;
UNCLASSIFIED DRUG;
AQUEOUS SOLUTION;
ARTICLE;
CHEMICAL MODIFICATION;
CROSS LINKING;
FILM;
HEATING;
IRRADIATION;
PHOTOCHEMISTRY;
PHYSICAL PHENOMENA;
SOLUBILITY;
SYNTHESIS;
TEMPERATURE DEPENDENCE;
THICKNESS;
VACUUM ULTRAVIOLET LITHOGRAPHY;
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EID: 0034583910
PISSN: 09149244
EISSN: None
Source Type: Journal
DOI: 10.2494/photopolymer.13.459 Document Type: Article |
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Times cited : (6)
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References (12)
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