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Characterization of Ray-PN resist for soft-X-ray projection lithography
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Monterey, CA, April
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K. Early, D. M. Tennant, D. Jeon, P. P. Mulgrew, A. A. MacDowell, O. R. Wood II, G. D. Kubiak, and D. A. Tichenor, "Characterization of Ray-PN resist for soft-X-ray projection lithography", presented at Soft-X-Ray Lithography Conference, Monterey, CA, April 1992.
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Early, K.1
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Silicon-containing bilayer resists for 193-nm lithography
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Santa Fe, NM, October
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R. R. Kunz, "Silicon-containing bilayer resists for 193-nm lithography", presented at the IEEE Lithography Workshop, Santa Fe, NM, October 1992.
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33745530354
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9
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4143150811
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Lithography with 157 nm lasers
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T. M. Bloomstein, M. W. Horn, M. Rothschild, R. R. Kunz, S. T. Palmacci, and R. B. Goodman, "Lithography with 157 nm lasers", J. Vac. Sci. Technol. B 15, 2112 (1997);
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10
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11744307460
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Critical issues in 157 nm lithography
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T. M. Bloomstein, M. Rothschild, R. R. Kunz, D. E. Hardy, R. B. Goodman, and S. T. Palmacci, "Critical issues in 157 nm lithography", J. Vac. Sci. Technol. B 16, 3154 (1998).
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Bloomstein, T.M.1
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11
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33745549850
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13
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A novel electron beam resist system - Acid catalyzed conversion of poly(di-t-butylsiloxane) into glass
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M. Sakata, T. Ito, M. Kosuge, and Y. Yamashita, "A novel electron beam resist system - acid catalyzed conversion of poly(di-t-butylsiloxane) into glass", J. Photopolym. Sci. Technol. 5, 181 (1991).
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Sakata, M.1
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14
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0026256248
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Chemically amplified bilevel resist based on condensation of siloxanes
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M. Sakata, T. Ito, and Y. Yamashita, "Chemically amplified bilevel resist based on condensation of siloxanes", Jpn. J. Appl. Phys. 30, 3116 (1991).
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Sakata, M.1
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15
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0002053947
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Three-dimensional siloxane resist for the formation of nanopatterns with minimum linewidth fluctuations
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H. Namatsu, Y. Takahashi, K. Yamazaki, T. Yamaguchi, M. Nagase, and K. Kurihara, "Three-dimensional siloxane resist for the formation of nanopatterns with minimum linewidth fluctuations", J. Vac. Sci. Technol. B 16, 69 (1998).
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16
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0000582196
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Positive bilayer resists for 248 and 193 nm lithography
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R. Sooriyakumaran, G. M. Wallraff, C. E. Larson, D. Fenzel-Alexander, R. A. DiPietro, J. Opitz, D. C. Hofer, D. C. LaTulipe, J. P. Simons, Q. Lin, and A. D. Katnani, "Positive bilayer resists for 248 and 193 nm lithography", Proc. SPIE V. 3333, 219 (1998).
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17
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0029765947
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U. Schaedeli, E. Tinguely, A. J. Blakeney, P. Falcigno, and R. R. Kunz, "Bilayer resist approach for 193-nm lithography", Proc. SPIE V. 2724, 344 (1996).
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18
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85033064747
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Silylation processes for 193-nm excimer laser lithography
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M. A. Hartney, R. R. Kunz, D. J. Ehrlich, and D. C. Shaver, "Silylation processes for 193-nm excimer laser lithography", Proc. SPIE V. 1262, 119 (1991).
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19
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Top-surface imaging resists for EUV lithography
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C. C. Henderson, D. R. Wheeler, T. P. Pollagi, D. J. O'Connell, J. E. M. Goldsmith, A. Fisher, and G. F. Cardinale, "Top-surface imaging resists for EUV lithography", Proc. SPIE V. 3331, 32 (1998).
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20
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33745617811
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Line edge roughness in sub0.18-um resist patterns
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S. C. Palmateer, S. G. Cann, J. E. Curtin, S. P. Doran, L. M. Eriksen, A. R. Forte, R. R. Kunz, T. M. Lyszczarz, and M. B. Stern, "Line edge roughness in sub0.18-um resist patterns", Proc. SPIE V. 3333, 634 (1998).
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