Study of bilayer silylation process for 193 nm lithography using chemically amplified resist

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 17, Issue 6, 1999, Pages 3326-3329

  Satou, I ^a   Kuhara, K ^a   Endo, M ^a   Morimoto, H ^a  

^a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 22844456185     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.591005     Document Type: Article

References (10)

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