Poly (α-methyl-p-hydroxystyrene-co-methacrylonitrile) based single-layer resists for VUV lithography: (2) F2 excimer laser exposure characteristics

Journal of Photopolymer Science and Technology

Volumn 13, Issue 3, 2000, Pages 467-470

  Kishimura, Shinji ^a   Sasago, Masaru ^a   Shirai, Masamitsu ^b   Kataoka, Atsuko ^b   Shinozuka, Toyofumi ^b   Tsunooka, Masahiro ^b  

^a PANASONIC CORPORATION   (Japan)

^b Osaka Prefecture University   (Japan)

Author keywords

157 nm; Poly (< methylstyrene); Polymethacrylonitrile; Resist; VUV lithography

Indexed keywords

COPOLYMER; METHACRYLONITRILE; POLY(ALPHA METHYL 4 HYDROXSTYRENE CO METHACRYLONITRILE); UNCLASSIFIED DRUG;

ARTICLE; CONDUCTANCE; CROSS LINKING; EXCIMER LASER; LIGHT ABSORPTION; LIGHT EXPOSURE; PHYSICAL PHENOMENA; THICKNESS; VACUUM ULTRAVIOLET LITHOGRAPHY;

EID: 0034583932     PISSN: 09149244     EISSN: None     Source Type: Journal    
DOI: 10.2494/photopolymer.13.467     Document Type: Article

References (10)