An improved drain-current-conductance method with substrate back-biasing

IEEE Transactions on Electron Devices

Volumn 46, Issue 2, 1999, Pages 431-433

  Tan, C B ^a   Chim, W K ^a   Chan, D S H ^a   Lou, C L ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

Body effect; Channel mobility; MOSFET; Parameter extraction; Series resistance

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTANCE; ELECTRIC RESISTANCE; SUBSTRATES;

DRAIN CURRENT CONDUCTANCE METHOD (DCCM);

MOSFET DEVICES;

EID: 0033079570     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.740913     Document Type: Article

References (9)

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