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Volumn 148, Issue 1-4, 1999, Pages 573-577
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Binary collision approximation modeling of ion-induced damage effects in crystalline 6H-SiC
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Author keywords
Ion implantation; Monte Carlo simulation; Radiation damage; Silicon carbide
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Indexed keywords
ALUMINUM;
APPROXIMATION THEORY;
COMPUTER SIMULATION;
COMPUTER SOFTWARE;
CRYSTAL ATOMIC STRUCTURE;
CRYSTALLINE MATERIALS;
ION IMPLANTATION;
MONTE CARLO METHODS;
RADIATION DAMAGE;
RUTHERFORD BACKSCATTERING SPECTROSCOPY;
SILICON CARBIDE;
SWELLING;
ION CHANNELING;
LINEAR CASCADE APPROXIMATION;
SEMICONDUCTING SILICON COMPOUNDS;
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EID: 0033513940
PISSN: 0168583X
EISSN: None
Source Type: Journal
DOI: 10.1016/S0168-583X(98)00698-3 Document Type: Article |
Times cited : (15)
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References (17)
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