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Volumn 148, Issue 1-4, 1999, Pages 573-577

Binary collision approximation modeling of ion-induced damage effects in crystalline 6H-SiC

Author keywords

Ion implantation; Monte Carlo simulation; Radiation damage; Silicon carbide

Indexed keywords

ALUMINUM; APPROXIMATION THEORY; COMPUTER SIMULATION; COMPUTER SOFTWARE; CRYSTAL ATOMIC STRUCTURE; CRYSTALLINE MATERIALS; ION IMPLANTATION; MONTE CARLO METHODS; RADIATION DAMAGE; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON CARBIDE; SWELLING;

EID: 0033513940     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00698-3     Document Type: Article
Times cited : (15)

References (17)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.