Incorporation of deep defects in GaN induced by doping and implantation processes

Physica Status Solidi (B) Basic Research

Volumn 216, Issue 1, 1999, Pages 587-591

  Krtschil, A ^a   Witte, H ^a   Lisker, M ^a   Christen, J ^a   Krost, A ^a   Birkle, U ^b   Einfeldt, S ^b   Hommel, D ^b   Wenzel, A ^c   Rauschenbach, B ^c  

^a OTTO VON GUERICKE UNIVERSITY   (Germany)

^b UNIVERSITY OF BREMEN   (Germany)

^c UNIVERSITY OF AUGSBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0033243006     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-3951(199911)216:1<587::AID-PSSB587>3.0.CO;2-T     Document Type: Article

References (18)

1. S. NAKAMURA, J.Y. DUBOZ, and M. ASIF KHAN, in: Group III Nitride Semiconductor Compounds, Ed. B.GIL, Clarendon Press, Oxford 1998.
2. J.W. LEE, S.J. PEARTON, J.C. ZOLPER, and R.A. STALL, Appl. Phys. Lett. 68, 2102 (1996).
3. U. BIRKLE, M. FEHRER, V. KIRCHNER, S. EINFELDT, D. HOMMEL, S. STRAUF, P. MICHLER, and J. GUTOWSKI, MRS Internet J. Nitride Semicond. Res. 4S1, G5.6 (1999).
4. A. KRTSCHIL, M. LISKER, H. WITTE, J. CHRISTEN, U. BIRKLE, S. EINFELDT, and D. HOMMEL, Mater. Sci. Engng. B, in press (1999).
5. A. KRTSCHIL, H. WITTE, M. LISKER, J. CHRISTEN, U. BIRKLE, S. EINFELDT, and D. HOMMEL, Appl. Phys. Lett. 74, 2032 (1999).
6. B. MONEMAR, Phys. Rev. B 10, 676 (1974).
7. J. BARBOLLA, S. DUEÑAS, and L. BAILÓN, Solid-State Electronics 35, 285 (1992). S. DUEÑAS, M. JARAIZ, J. VICENTE, E. RUBIO, L. BAILÓN, and J. BARBOLLA, J. Appl. Phys. 61, 2541 (1987).
8. J. BARBOLLA, S. DUEÑAS, and L. BAILÓN, Solid-State Electronics 35, 285 (1992). S. DUEÑAS, M. JARAIZ, J. VICENTE, E. RUBIO, L. BAILÓN, and J. BARBOLLA, J. Appl. Phys. 61, 2541 (1987).
9. W. GÖTZ, N.M. JOHNSON, J. WALKER, D.P. BOUR, and R.A. STREET, Appl. Phys. Lett. 68, 667 (1996).
10. M. SMITH, G.D. CHEN, J.Y. LIN, H.X. JIANG, A. SALVADOR, B.N. SVERDLOV, A. BOTCHKAREV, H. MORKOC, and B. GOLDENBERG, Appl. Phys. Lett. 68, 1883 (1996).
11. J.C. ZOLPER, R.G. WILSON, S.J. PEARTON, and R.A. STALL, Appl. Phys. Lett. 68, 1945 (1996).
12. P. BOGUSLAWSKI, E.L. BRIGGS, and J. BERNHOLC, Appl. Phys. Lett. 69, 233 (1996).
13. J.P. BIERSACK and L.G. HAGGMARK, Nucl. Instrum. Methods 174, 257 (1980).
14. D.C. LOOK, D.C. REYNOLDS, J.W. HEMSKY, J.R. SIZELOVE, R.L. JONES, and R.J. MOLNAR, Phys. Rev. Lett. 79, 2273 (1997).
15. T.L. TANSLEY and R.J. EGAN, Phys. Rev. B 45, 10942 (1992).
16. D.W. JENKINS and J.D. DOW, Phys. Rev. B 39, 3317 (1989).
17. U. KAUFMANN, M. KUNZER, M. MAIER, H. OBLOH, A. RAMAKRISHNAN, B. SANTIC, and P. SCHLOTTER, Appl. Phys. Lett. 72, 1326 (1998).
18. A. KRTSCHIL, H. WITTE, M. LISKER, J. CHRISTEN, A. KKOST, A. WENZEL, B. RAUSCHENBACH, U. BIRKLE, S. EINFELDT, and D. HOMMEL, to be published