Distribution of ion implanted dopants in gallium nitride

Proceedings of the International Conference on Ion Implantation Technology

Volumn , Issue , 2000, Pages 99-102

  Wenzel, Axel ^a   Karl, Helmut ^a   Liu, Chang ^a   Rauschenbach, Bernd ^b  

^a UNIVERSITY OF AUGSBURG   (Germany)

^b UNIVERSITY OF LEIPZIG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DAMAGE PROFILES; DEPTH DISTRIBUTION; DETECTION LIMITS; IMPLANTATION DEPTH; ION-CHARGE; ION-IMPLANTED DOPANTS; MONTE CARLO SIMULATION; PROJECTED RANGE; RUTHERFORD BACK-SCATTERING; SECONDARY ION MASS SPECTROSCOPY;

GALLIUM ALLOYS; GALLIUM NITRIDE; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY;

ION IMPLANTATION;

EID: 78649864484     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/.2000.924100     Document Type: Conference Paper

References (7)

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