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Journal of Applied Physics

Volumn 91, Issue 1, 2002, Pages 56-64

Metalorganic molecular beam epitaxy of (In)GaAsN with dimethylhydrazine

(5) Jin, C a Nikishin, S A a Kuchinskii, V I a Temkin, H a Holtz, M b

a Texas Tech University (United States)

b TEXAS TECH UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC FLUXES; DIMETHYLHYDRAZINE; FLUX RATIO; GROWTH MECHANISMS; INGAASN; METAL-ORGANIC MOLECULAR BEAM EPITAXY; NITROGEN INCORPORATION; SINGLE LAYER; SINGLE PHASE; SUBSTRATE TEMPERATURE; TRIETHYL GALLIUMS; TRIMETHYLINDIUM;

ARSENIC; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; NITROGEN;

GROWTH KINETICS;

EID: 0036137185 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.1419206 Document Type: Article

Times cited : (5)

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