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Volumn 288, Issue 1-2, 1996, Pages 224-228
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Properties of furnace crystallized polysilicon films prepared by r.f. sputtering
a a a |
Author keywords
Silicon; Sputtering
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Indexed keywords
ANNEALING;
AUGER ELECTRON SPECTROSCOPY;
CRYSTAL MICROSTRUCTURE;
GRAIN BOUNDARIES;
GRAIN SIZE AND SHAPE;
MAGNETRON SPUTTERING;
PRESSURE EFFECTS;
RUTHERFORD BACKSCATTERING SPECTROSCOPY;
SEMICONDUCTING FILMS;
SEMICONDUCTING POLYMERS;
TRANSMISSION ELECTRON MICROSCOPY;
X RAY DIFFRACTION ANALYSIS;
CRYSTALLIZED POLYSILICON FILMS;
HALL MOBILITY;
RADIO FREQUENCY MAGNETRON SPUTTERING;
SEMICONDUCTING SILICON;
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EID: 0030289882
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/S0040-6090(96)08861-X Document Type: Article |
Times cited : (11)
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References (14)
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