A fully integrated 40-Gbit/s clock and data recovery circuit using InP/InGaAs HBTs

IEEE MTT-S International Microwave Symposium Digest

Volumn 1, Issue , 2002, Pages 83-86

  Nosaka, Hideyuki ^a   Sano, Eiichi ^b   Ishii, Kiyoshi ^a   Ida, Minoru ^a   Kurishima, Kenji ^a   Enoki, Takatomo ^a   Shibata, Tsugumichi ^a  

^a NTT CORPORATION   (Japan)

^b HOKKAIDO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFERENTIAL AMPLIFIERS; ELECTRIC POWER SUPPLIES TO APPARATUS; FLIP FLOP CIRCUITS; HETEROJUNCTION BIPOLAR TRANSISTORS; PHASE LOCKED LOOPS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; TIMING CIRCUITS; VARIABLE FREQUENCY OSCILLATORS;

ERROR FREE OPERATION; INTEGRATED CLOCK AND DATA RECOVERY CIRCUIT; PHASE DETECTOR; PSEUDORANDOM BIT SEQUENCE; WIDE EYE OPENING;

INTEGRATED CIRCUIT LAYOUT;

EID: 0036070386     PISSN: 0149645X     EISSN: None     Source Type: Journal    
DOI: 10.1109/MWSYM.2002.1011564     Document Type: Article

References (11)

1. A fully-integrated 40Gb/s clock and data recovery / 1:4 DEMUX IC in SiGe technology
2. A complete GaAs HEMT single chip data receiver for 40 Gbit/s data rates
3. Fully monolithic integrated 43 Gbit/s clock and data recovery circuit in InP HEMT technology
4. Clock and data recovery IC for 40 Gb/s fiber-optic receiver
5. Low phase noise millimeter-wave frequency sources using InP-based HBT MMIC technology
6. 40Gbit/s decision IC using InP/InGaAs composite-collector heterojunction bipolar transistors
7. High-speed, low-power lightwave communication ICs using InP/InGaAs double-heterojunction bipolar transistors
8. Undoped-emitter InP/InGaAs HBTs for high-speed and low-power applications
9. 3.5-Gb/s x 4-ch Si bipolar LSI’s for optical interconnection
10. Very-high-speed Si bipolar static frequency dividers with T-type flip-flops
11. 70-Gbit/s multiplexer and 50-Gbit/s decision IC modules using InAlAs/InGaAs/InP HEMTs