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Volumn E82-C, Issue 11, 1999, Pages 2000-2006

High-speed, low-power lightwave communication ICs using InP/InGaAs double-heterojunction bipolar transistors

Author keywords

amplifier; flip flop; HBT; Inp; PLL

Indexed keywords


EID: 0001288932     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (4)

References (20)
  • 2
    • 0002219002 scopus 로고
    • Lightwave communication ICs for 10Gbit/s and beyond (invited)
    • San Diego, CA, Feb.
    • E. Sano, Y. Imai, and H. Ichino, "Lightwave communication ICs for 10Gbit/s and beyond (invited)," Tech. Dig. Optical Fiber Communication, pp.36-37, San Diego, CA, Feb. 1995.
    • (1995) Tech. Dig. Optical Fiber Communication , pp. 36-37
    • Sano, E.1    Imai, Y.2    Ichino, H.3
  • 5
    • 0028727604 scopus 로고
    • 10Gb/s monolithic optical modulator driver with high output voltage of 5V using InGaP/GaAs HBTs
    • Philadelphia, PA, Oct.
    • Y. Yamauchi, K. Nagata, T. Makimura, O. Nakajima, H. Ito, and T. Ishibashi, "10Gb/s monolithic optical modulator driver with high output voltage of 5V using InGaP/GaAs HBTs," IEEE GaAs IC Symp. Tech. Dig., pp.207-210, Philadelphia, PA, Oct. 1994.
    • (1994) IEEE GaAs IC Symp. Tech. Dig. , pp. 207-210
    • Yamauchi, Y.1    Nagata, K.2    Makimura, T.3    Nakajima, O.4    Ito, H.5    Ishibashi, T.6
  • 8
    • 0029459630 scopus 로고
    • Record bandwidth (42 GHz measured) and polarisation insensitive (< 0.4 dB) tensile strained InGaAsP MQW ridge waveguide electroabsorption modulator for ultra-high bitrate TDM systems
    • Brussels, Belgium, Sept.
    • H. Haisch, D. Baums, E. Lach, D. Kaiser, E. Kühn, K. Satzke, J. Weber, R. Weinmann, P. Wiedemann, and E. Zielinski, "Record bandwidth (42 GHz measured) and polarisation insensitive (< 0.4 dB) tensile strained InGaAsP MQW ridge waveguide electroabsorption modulator for ultra-high bitrate TDM systems," Proc. 21st Eur. Conf. on Opt. Comm., pp.1007-1010, Brussels, Belgium, Sept. 1995.
    • (1995) Proc. 21st Eur. Conf. on Opt. Comm. , pp. 1007-1010
    • Haisch, H.1    Baums, D.2    Lach, E.3    Kaiser, D.4    Kühn, E.5    Satzke, K.6    Weber, J.7    Weinmann, R.8    Wiedemann, P.9    Zielinski, E.10
  • 9
    • 0029458039 scopus 로고
    • High-speed, highly efficient MQW modulator module with polarization insensitivity and very low chirp
    • Brussels, Belgium, Sept.
    • K. Wakita, K. Yoshino, I. Kotaka, S. Kondo, and Y. Noguchi, "High-speed, highly efficient MQW modulator module with polarization insensitivity and very low chirp," in Proc. 21st Eur. Conf. on Opt. Comm., pp.1011-1014, Brussels, Belgium, Sept. 1995.
    • (1995) Proc. 21st Eur. Conf. on Opt. Comm. , pp. 1011-1014
    • Wakita, K.1    Yoshino, K.2    Kotaka, I.3    Kondo, S.4    Noguchi, Y.5
  • 10
    • 33746404447 scopus 로고    scopus 로고
    • Application of small scale InP/InGaAs DHBTs to singlechip 20-Gbit/s regenerative receiver circuits with extremely low power dissipation (invited)
    • Incline Village, NV, March
    • S. Yamahata, K. Kurishima, II. Nakajima, and E. Sano, "Application of small scale InP/InGaAs DHBTs to singlechip 20-Gbit/s regenerative receiver circuits with extremely low power dissipation (invited)," Topical Meet. Ultrafast Electron. Optoelectron., pp.124-126, Incline Village, NV, March 1997.
    • (1997) Topical Meet. Ultrafast Electron. Optoelectron. , pp. 124-126
    • Yamahata, S.1    Kurishima, K.2    Nakajima, I.I.3    Sano, E.4
  • 11
    • 0029217420 scopus 로고
    • InP-based HBTs and their perspective for microwave applications (invited)
    • Sapporo, Japan, May
    • H.-F. Chau, W. Liu, and E.A. Beam, III, "InP-based HBTs and their perspective for microwave applications (invited)," Proc. 7-th Int. Conf. on InP and Related Materials, pp.640643, Sapporo, Japan, May 1995.
    • (1995) Proc. 7-th Int. Conf. on InP and Related Materials , pp. 640643
    • Chau, H.-F.1    Liu, W.2    Beam III, E.A.3
  • 12
    • 0029369318 scopus 로고
    • Growth, design and performance of InPbased heterostructure bipolar transistors
    • K. Kurishima, H. Nakajima, S. Yamahata, T. Kobayashi, and Y. Matsuoka, "Growth, design and performance of InPbased heterostructure bipolar transistors," IEICE Trans. Electron., vol.E78-C, no.9, pp.1171-1181, 1995.
    • (1995) IEICE Trans. Electron. , vol.E78-C , Issue.9 , pp. 1171-1181
    • Kurishima, K.1    Nakajima, H.2    Yamahata, S.3    Kobayashi, T.4    Matsuoka, Y.5
  • 14
    • 0027668071 scopus 로고
    • IC-oriented self-aligned highperformance AlGaAs/GaAs ballistic collection transistors and their applications to high-speed ICs
    • Sep.
    • Y. Matsuoka, S. Yamahata, S. Yamaguchi, K. Murata, E. Sano, and T. Ishibashi, "IC-oriented self-aligned highperformance AlGaAs/GaAs ballistic collection transistors and their applications to high-speed ICs," IEICE Trans. Electron., vol.E7G-C, no.9, pp.1392-1401, Sep. 1993.
    • (1993) IEICE Trans. Electron. , vol.E7G-C , Issue.9 , pp. 1392-1401
    • Matsuoka, Y.1    Yamahata, S.2    Yamaguchi, S.3    Murata, K.4    Sano, E.5    Ishibashi, T.6
  • 15
    • 0029543896 scopus 로고
    • Over-220-GHz-/r-and-/max InP/InGaAs double-heterojunction bipolar transistors with a new hexagonal-shaped emitter
    • San Diego, CA, Oct.
    • S. Yamahata, K. Kurishima, H. Ito, and Y. Matsuoka, "Over-220-GHz-/r-and-/max InP/InGaAs double-heterojunction bipolar transistors with a new hexagonal-shaped emitter," IEEE GaAs IC Symp. Dig., pp.163166, San Diego, CA, Oct. 1995.
    • (1995) IEEE GaAs IC Symp. Dig. , pp. 163166
    • Yamahata, S.1    Kurishima, K.2    Ito, H.3    Matsuoka, Y.4
  • 16
    • 0030289733 scopus 로고    scopus 로고
    • InP/InGaAs double-heterojunction bipolar transistors for high-speed optical receivers
    • E. Sano, M. Yoneyama, S. Yamahata, and Y. Matsuoka, "InP/InGaAs double-heterojunction bipolar transistors for high-speed optical receivers," IEEE Trans. Electron Devices, vol.43, pp. 1826-1832, 1996.
    • (1996) IEEE Trans. Electron Devices , vol.43 , pp. 1826-1832
    • Sano, E.1    Yoneyama, M.2    Yamahata, S.3    Matsuoka, Y.4
  • 19
    • 33746457583 scopus 로고
    • 10Gb/s monolithic optoelectronic integrated receiver with clock recovery, data decision, and 1 : 4 demultiplexer
    • Lille, France, Sept.
    • Z.-G. Wang, V. Hurm, M. Lang, M. Berroth, M. Ludwig, T. Fink, K. Kohler, and B. Raynor, "10Gb/s monolithic optoelectronic integrated receiver with clock recovery, data decision, and 1 : 4 demultiplexer," Proc. ESSCIRC'95, pp.354-357, Lille, France, Sept. 1995.
    • (1995) Proc. ESSCIRC'95 , pp. 354-357
    • Wang, Z.-G.1    Hurm, V.2    Lang, M.3    Berroth, M.4    Ludwig, M.5    Fink, T.6    Kohler, K.7    Raynor, B.8
  • 20
    • 0006686675 scopus 로고
    • Propagation delay in high speed silicon bipolar and GaAs HBT digital circuits
    • P.K. Tien, "Propagation delay in high speed silicon bipolar and GaAs HBT digital circuits," Int. J. High Speed Electron., vol.1, pp.101-124, 1990.
    • (1990) Int. J. High Speed Electron. , vol.1 , pp. 101-124
    • Tien, P.K.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.