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0029359760
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Compact 10-Gbit/s optical transmitter and receiver circuit packs
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2
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0002219002
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Lightwave communication ICs for 10Gbit/s and beyond (invited)
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San Diego, CA, Feb.
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Sano, E.1
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85011607372
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39.5-GHz static frequency divider implemented in AlInAs/GalnAs HBT technology
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Miami, FL, Oct.
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0026223064
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10Gbit/s AlGaAs/GaAs HBT driver IC for lasers or lightwave modulators
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R.K. Montgomery, F. Ren, C.R. Abernathy, T.R. Fullowan, R.F. Kopf, P.R. Smith, S.J. Pearton, P. Wisk, J. Lothian, R.N. Nottenburg, T.V. Nguyen, and F. Bosch, "10Gbit/s AlGaAs/GaAs HBT driver IC for lasers or lightwave modulators," Electron. Lett., vol.27, pp.1827-1829, 1991.
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0028727604
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10Gb/s monolithic optical modulator driver with high output voltage of 5V using InGaP/GaAs HBTs
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Philadelphia, PA, Oct.
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Y. Yamauchi, K. Nagata, T. Makimura, O. Nakajima, H. Ito, and T. Ishibashi, "10Gb/s monolithic optical modulator driver with high output voltage of 5V using InGaP/GaAs HBTs," IEEE GaAs IC Symp. Tech. Dig., pp.207-210, Philadelphia, PA, Oct. 1994.
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6
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85027107124
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AlGaAs/GaAs HBT IC for 20-Gb/s optical transmission systems
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N. Nagano, M. Soda, H. Tezuka, T. Suzaki, and K. Honjo, "AlGaAs/GaAs HBT IC for 20-Gb/s optical transmission systems," IEICE Technical Report, ED94-122, 1995.
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Nagano, N.1
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0030084437
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14 Gbit/s digital optical transmitter module using GaAs HBTs and DFB laser
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M. Menouni, E. Wawrzynkowski, S. Vuyc, P. Desrousseaux, P. Launay, and J. Dangla, "14 Gbit/s digital optical transmitter module using GaAs HBTs and DFB laser," Electron. Lett., vol.32, pp.231-233, 1996.
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0029459630
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Record bandwidth (42 GHz measured) and polarisation insensitive (< 0.4 dB) tensile strained InGaAsP MQW ridge waveguide electroabsorption modulator for ultra-high bitrate TDM systems
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Brussels, Belgium, Sept.
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H. Haisch, D. Baums, E. Lach, D. Kaiser, E. Kühn, K. Satzke, J. Weber, R. Weinmann, P. Wiedemann, and E. Zielinski, "Record bandwidth (42 GHz measured) and polarisation insensitive (< 0.4 dB) tensile strained InGaAsP MQW ridge waveguide electroabsorption modulator for ultra-high bitrate TDM systems," Proc. 21st Eur. Conf. on Opt. Comm., pp.1007-1010, Brussels, Belgium, Sept. 1995.
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Zielinski, E.10
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9
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0029458039
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High-speed, highly efficient MQW modulator module with polarization insensitivity and very low chirp
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Brussels, Belgium, Sept.
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K. Wakita, K. Yoshino, I. Kotaka, S. Kondo, and Y. Noguchi, "High-speed, highly efficient MQW modulator module with polarization insensitivity and very low chirp," in Proc. 21st Eur. Conf. on Opt. Comm., pp.1011-1014, Brussels, Belgium, Sept. 1995.
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10
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33746404447
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Application of small scale InP/InGaAs DHBTs to singlechip 20-Gbit/s regenerative receiver circuits with extremely low power dissipation (invited)
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Incline Village, NV, March
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S. Yamahata, K. Kurishima, II. Nakajima, and E. Sano, "Application of small scale InP/InGaAs DHBTs to singlechip 20-Gbit/s regenerative receiver circuits with extremely low power dissipation (invited)," Topical Meet. Ultrafast Electron. Optoelectron., pp.124-126, Incline Village, NV, March 1997.
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Yamahata, S.1
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Nakajima, I.I.3
Sano, E.4
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11
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0029217420
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InP-based HBTs and their perspective for microwave applications (invited)
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Sapporo, Japan, May
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H.-F. Chau, W. Liu, and E.A. Beam, III, "InP-based HBTs and their perspective for microwave applications (invited)," Proc. 7-th Int. Conf. on InP and Related Materials, pp.640643, Sapporo, Japan, May 1995.
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12
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0029369318
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Growth, design and performance of InPbased heterostructure bipolar transistors
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K. Kurishima, H. Nakajima, S. Yamahata, T. Kobayashi, and Y. Matsuoka, "Growth, design and performance of InPbased heterostructure bipolar transistors," IEICE Trans. Electron., vol.E78-C, no.9, pp.1171-1181, 1995.
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Matsuoka, Y.5
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13
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0028264742
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Novel InP/InGaAs doubleheterojunction bipolar transistors suitable for high-speed ICs and OEIC's (invited)
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Santa Barbara, CA, March
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Y. Matsuoka, H. Nakajima, K. Kurishima, T. Kobayashi, M. Yoneyama, and E. Sano, "Novel InP/InGaAs doubleheterojunction bipolar transistors suitable for high-speed ICs and OEIC's (invited)," Proc. C-th Int. Conf. on InP and Related Materials pp.555-558, Santa Barbara, CA, March 1994.
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14
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0027668071
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IC-oriented self-aligned highperformance AlGaAs/GaAs ballistic collection transistors and their applications to high-speed ICs
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Sep.
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15
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0029543896
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Over-220-GHz-/r-and-/max InP/InGaAs double-heterojunction bipolar transistors with a new hexagonal-shaped emitter
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San Diego, CA, Oct.
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S. Yamahata, K. Kurishima, H. Ito, and Y. Matsuoka, "Over-220-GHz-/r-and-/max InP/InGaAs double-heterojunction bipolar transistors with a new hexagonal-shaped emitter," IEEE GaAs IC Symp. Dig., pp.163166, San Diego, CA, Oct. 1995.
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Yamahata, S.1
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Matsuoka, Y.4
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16
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0030289733
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InP/InGaAs double-heterojunction bipolar transistors for high-speed optical receivers
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E. Sano, M. Yoneyama, S. Yamahata, and Y. Matsuoka, "InP/InGaAs double-heterojunction bipolar transistors for high-speed optical receivers," IEEE Trans. Electron Devices, vol.43, pp. 1826-1832, 1996.
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Sano, E.1
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17
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0029488306
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3.5-Gb/sx4ch Si bipolar LSI's for optical interconnection
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N. Ishihara, S. Fujita, M. Togashi, S. Hino, Y. Aral, N. Tanaka, Y. Kobayashi, and Y. Akazawa, "3.5-Gb/sx4ch Si bipolar LSI's for optical interconnection," IEEE J. Solid-State Circuits, vol.30, pp.1493-1501, 1995.
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Kobayashi, Y.7
Akazawa, Y.8
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18
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33746403066
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2.4 Gbit/s lightwave tranceiver using 1.55/im MQW DFB-LD
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K. Motoshima, M. Nogami, N. Kebukawa, and T. Ki-tayama, "2.4 Gbit/s lightwave tranceiver using 1.55/im MQW DFB-LD," 1991 National Convention of IEICE, 4106, 1991.
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1991 National Convention of IEICE
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Motoshima, K.1
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Kebukawa, N.3
Ki-tayama, T.4
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19
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33746457583
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10Gb/s monolithic optoelectronic integrated receiver with clock recovery, data decision, and 1 : 4 demultiplexer
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Lille, France, Sept.
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Z.-G. Wang, V. Hurm, M. Lang, M. Berroth, M. Ludwig, T. Fink, K. Kohler, and B. Raynor, "10Gb/s monolithic optoelectronic integrated receiver with clock recovery, data decision, and 1 : 4 demultiplexer," Proc. ESSCIRC'95, pp.354-357, Lille, France, Sept. 1995.
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Wang, Z.-G.1
Hurm, V.2
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Berroth, M.4
Ludwig, M.5
Fink, T.6
Kohler, K.7
Raynor, B.8
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20
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0006686675
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Propagation delay in high speed silicon bipolar and GaAs HBT digital circuits
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