Advanced power copper technology for SMARTMOS™ application designs

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 2000, Pages 141-144

  Pages, I ^a   Baird, B ^a   Wang, J ^a   Sicard, T ^a   Dorkel, J M ^a   Dupuy, P ^a   Lance, P ^a   Huynh, E ^a   Chung, Y ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AUTOMOTIVE ENGINEERING; COPPER; COST EFFECTIVENESS; INTEGRATED CIRCUIT LAYOUT; METALLIZING; POWER ELECTRONICS; TECHNOLOGY TRANSFER; THERMOANALYSIS;

ELECTRONIC MODULES; METAL DEBIASING; POWER DISSIPATION;

MOS DEVICES;

EID: 0034448913     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. Transient thermal simulation of power device with copper layer
2. Energy capability of power device with Cu layer integration
3. Rapid thermal modeling for smart-power and integrated multichip power circuit design
4. Lateral thinking about power device