Normal incidence spectroscopic ellipsometry and polarized reflectometry for measurement of photoresist critical dimensions

Proceedings of SPIE-The International Society for Optical Engineering

Volumn 4689 II, Issue , 2002, Pages 1110-1121

  Holden, James M ^a   Gubiotti, Tom ^a   McGaham, William A ^a   Dusa, Mircea ^b   Kiers, Ton ^b  

^a NANOMETRICS INC   (United States)

^b ASM Lithography ^*  (Netherlands)

Author keywords

APC; Lithography latitude; Model fit; Polarized reflectometry; RCWT; Slit and scan intrafield; Spectroscopic ellipsometry; TE; TM

Indexed keywords

DATA ACQUISITION; DIFFRACTION GRATINGS; ELLIPSOMETRY; LIGHT POLARIZATION; LIGHT SCATTERING; SPECTROSCOPIC ANALYSIS;

POLARIZED REFLECTOMETRY;

PHOTORESISTS;

EID: 0036030586     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.473439     Document Type: Article

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