Intra field critical dimension variation using KrF scanner system for 0.18 um lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3334, Issue , 1998, Pages 77-91

  Yim, Donggyu ^a   Kim, Hyeong Soo ^a   Baik, Ki Ho ^a  

^a Hynix Semiconductor Inc   (South Korea)

Author keywords

0.18 um lithography; Causes of intra field CD variation; KrF scanner

Indexed keywords

DATA STORAGE EQUIPMENT; KRYPTON; LIGHT; LITHOGRAPHY; PHOTORESISTS; THICKNESS MEASUREMENT;

0.18 UM LITHOGRAPHY; CAUSES OF INTRA FIELD CD VARIATION; DESIGN RULES; DIFFRACTION LIMITED; EXPOSURE DOSE; ILLUMINATION OPTICS; KRF SCANNER; MASK ERRORS; SCAN DIRECTION; SYNCHRONIZATION ERRORS;

SCANNING;

EID: 0005011012     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.310813     Document Type: Conference Paper

References (9)

1. Kazuaki Suzuki, et al., "KrF step and scan exposure system using higher N.A. projection lens", SPIE 2776 (1996)
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4. D. Yim, et al., " Aberration effects in the region of 0.18 um lithography with KrF excimer stepper", SPIE 3051 (1997)
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7. Y. Borodovsky, et al., "Impact of local partial coherence variations on exposure tool performance", SPIE 2440 (1996)
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9. D. G. Flagello, et. al., "Towards a comprehensive control of full-field image quality in optical photolithography", SPIE 3051 (1997)