Deep discrete trenches filled by in-situ doped polysilicon: an alternative method for junction insulating box

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3881, Issue , 1999, Pages 252-258

  Pierre, F ^a   Aachboun, S ^a   Bonnaud, O ^a   Lhermite, H ^a   Ranson, P ^a   Anceau, Ch ^a   Cornibert, L ^a  

^a UNIVERSITÉ DE RENNES 1   (France)

Author keywords

[No Author keywords available]

Indexed keywords

APPLICATION SPECIFIC INTEGRATED CIRCUITS; BORON; CHEMICAL VAPOR DEPOSITION; DIFFUSION; DOPING (ADDITIVES); ELECTRIC BREAKDOWN; ELECTRIC INSULATION; ELECTRIC INSULATION TESTING; POWER ELECTRONICS; PRESSURE EFFECTS; SEMICONDUCTOR JUNCTIONS; SILANES;

DEEP DISCRETE TRENCHES; HIGH DENSITY LOW PRESSURE PLASMA REACTOR; JUNCTION INSULATING BOX; LOW PRESSURE CHEMICAL VAPOR DEPOSITION TECHNIQUE;

MICROELECTRONIC PROCESSING;

EID: 0033316108     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.360559     Document Type: Conference Paper

References (6)