SCOPUS 정보 검색 플랫폼

Microelectronics Journal

Volumn 32, Issue 4, 2001, Pages 295-300

Modeling and characterization of deep trench isolation structures

(2) Lee, S a Bashir, R a

a PURDUE UNIVERSITY (United States)

Author keywords

High voltage isolation; Trench isolation; Trench modeling; Trench sidewall interface

Indexed keywords

ELECTRIC POTENTIAL; EQUIVALENT CIRCUITS; INTERFACES (MATERIALS); POLYSILICON; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING;

DEEP TRENCH ISOLATION; TRENCH SIDEWALL INTERFACES;

MICROELECTRONIC PROCESSING;

EID: 0035311925 PISSN: 00262692 EISSN: None Source Type: Journal
DOI: 10.1016/S0026-2692(00)00148-8 Document Type: Article

Times cited : (10)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.