Reduction of carbon impurities in silicon oxide films prepared by rf plasma-enhanced CVD

Thin Solid Films

Volumn 390, Issue 1-2, 2001, Pages 88-92

  Teshima, Katsuya ^a,b   Inoue, Yasushi ^a   Sugimura, Hiroyuki ^a   Takai, Osamu ^a  

^a NAGOYA UNIVERSITY   (Japan)

^b DAI NIPPON PRINTING CO LTD   (Japan)

Author keywords

Carbon radical; Organosilicon compound; Plasma enhanced CVD; Silicon oxide films

Indexed keywords

CARBON; FILM PREPARATION; FREE RADICALS; IMPURITIES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; REDUCTION;

ORGANOSILICON COMPOUND;

SILICA;

EID: 0035973374     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(01)00943-9     Document Type: Article

References (18)