Properties of GaN-based laser diodes with a buried-ridge structure

Journal of Crystal Growth

Volumn 221, Issue 1-4, 2000, Pages 640-645

  Asatsuma, Tsunenori ^a   Nakajima, Hiroshi ^a   Hashimoto, Shigeki ^a   Yamaguchi, Takashi ^a   Yoshida, Hiroshi ^a   Tomiya, Shigetaka ^a   Asano, Takeharu ^a   Hino, Tomonori ^a   Ozawa, Masafumi ^a   Miyajima, Takao ^a   Kobayashi, Toshimasa ^a   Ikeda, Masao ^a  

^a SONY CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

NITRIDES; REFRACTIVE INDEX; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH;

ALUMINUM GALLIUM NITRIDES;

SEMICONDUCTOR LASERS;

EID: 0034512571     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00792-2     Document Type: Article

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