Deposition, evaluation and control of 4H and 6H SiC epitaxial layers for device applications

Materials Science and Engineering: B

Volumn 80, Issue 1-3, 2001, Pages 332-336

  Neyret, E ^a,b   Di Cioccio, L ^a   Bluet, J M ^a   Pernot, J ^b   Vicente, P ^b   Anglos, D ^c   Lagadas, M ^c   Billon, T ^a  

^a CEA GRENOBLE   (France)

^b CNRS   (France)

^c INSTITUTE OF COMPUTER SCIENCE   (Greece)

Author keywords

CVD; Growth kinetic; Schottky diode; SiC

Indexed keywords

CHEMICAL REACTORS; CHEMICAL VAPOR DEPOSITION; ELECTRONIC PROPERTIES; EPITAXIAL GROWTH; FILM GROWTH; MATHEMATICAL MODELS; SEMICONDUCTING FILMS;

COLD WALL REACTOR;

SILICON CARBIDE;

EID: 0035932322     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(00)00659-0     Document Type: Article

References (19)