Shallow and deep donors in transport properties of N-implanted 6H-SiC

Materials Science and Engineering: B

Volumn 61-62, Issue , 1999, Pages 301-304

  Thomas, P ^a   Contreras, S ^a   Robert, J L ^a   Zawadzki, W ^a,c   Gimbert, J ^b,d   Billon, T ^b  

^a CNRS   (France)

^b CEA LETI   (France)

^c INSTITUTE OF PHYSICS   (Poland)

^d STMICROELECTRONICS   (Italy)

Author keywords

Nitrogen implantation; SiC; Transport properties

Indexed keywords

CARRIER MOBILITY; HALL EFFECT; MATHEMATICAL MODELS; NITROGEN; SEMICONDUCTING SILICON COMPOUNDS; TRANSPORT PROPERTIES;

IMPURITY LEVEL MODEL;

SILICON CARBIDE;

TRANSPORT;

EID: 0033618715     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00522-4     Document Type: Article

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