Chapter 13 Phonons and Phase Transitions in GaN

Semiconductors and Semimetals

Volumn 50, Issue C, 1997, Pages 409-429

  Christensen, N E ^a   Perlin, P ^b  

^a AARHUS UNIVERSITY   (Denmark)

^b INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

III-V SEMICONDUCTORS;

GALLIUM NITRIDE;

EID: 0347072013     PISSN: 00808784     EISSN: None     Source Type: Book Series    
DOI: 10.1016/S0080-8784(08)63094-X     Document Type: Article

References (53)

1. Arguello C.A., Rousseau D.L., and Porto S.P.S. First-Order Raman Effect in Wurtzite-Type Crystals. Phys. Rev. 181 (1969) 1351
2. Barker A.S., and Illegems M. Infrared Lattice Vibrations and Free-Electron Dispersion in GaN. Phys. Rev. B7 (1972) 743
3. Brand M.S.T., Ager III J.W., Götz W., Johnson N.M., Harris Jr. J.S., Molnar R.J., and Moustakas T.D. Local Vibrational Modes in Mg-Doped Gallium Nitride. Phys. Rev. B49 (1994) 14758
4. Burns G., Dacol F., Marinace J.C., and Scott B.A. Raman Scattering in Thin-Film Waveguides. Appl. Phys. Lett. 22 (1973) 356
5. Camassel J., Beamont B., Talercio T., Malzac J.P., Shwedler R., Gobart P., and Perlin P. Raman and Micro-Raman Spectroscopy of GaN Layers Deposited on Sapphire. Inst. Phys. Conf. Ser. 142 (1995) 959 Ch. 5
6. Van Camp P.E., Van Doren V.E., and Devreese J.T. High Pressure Structural Phase Transformation in Gallium Nitride. Solid State Commun. 81 (1992) 23
7. Christensen N.E., and Heine V. Analysis of the Electronic Pressure in Transition and Noble Metals. Phys. Rev. B32 (1985) 6145
8. Christensen N.E., and Gorzcyca I. Calculated Structural Transitions of Aluminum Nitride Under Pressure. Phys. Rev. B47 (1993) 4307
9. Christensen N.E., and Gorczyca I. Optical and Structural Properties of III-V Nitrides Under Pressure. Phys. Rev. B50 (1994) 4397
10. Christensen N.E. Electronic Structures of Semiconductors Under Pressure. In: Suski T., and Paul W. (Eds). High Pressure in Semiconductor Physics (1997), Academic Press
11. Gorczyca I., and Christensen N.E. Band Structure and High-Pressure Phase Transition in GaN. Solid State Commun. 80 (1991) 335
12. Gorczyca I., Christensen N.E., Pelzer y Blanca E.L., and Rodriguez C.O. Optical Phonon Modes in GaN and A1N. Phys. Rev. B51 (1995) 11936
13. Gorczyca, I., Svane, A., and Christensen, N. E. (1997). "Calculated Defect Levels in GaN and A1N and their Pressure Coefficients". Solid State Commun. (in print).
14. Götz W., Johnson N.M., Bour D.P., McCluskey M.D., and Haller E.E. Local Vibrational Modes of the Mg-H Acceptor Complex in GaN. Appl. Phys. Lett. 69 (1996) 3725
15. Hung-Red K., Ming-Shiann F., Jeng-Dah G., and Ming-Chih L. Raman Scattering of Se-Doped Gallium Nitride Films. J. Appl. Phys. 34 (1995) 5628
16. Kim K., Lambrecht W.R.L., and Segall B. Electronic Structure of GaN with Strain and Phonon Distortions. Phys. Rev. B50 (1994) 1502
17. Kim K., Lambrecht W.R.L., and Segall B. Elastic Constants and Related Properties of the Group III-Nitrides. Mat. Res. Symp. Proc. 395 (1996) 399
18. Phys. Rev B53 (1996) 16310
19. Kleinman L. Deformation Potentials in Silicon. I. Uniaxial Strain. Phys. Rev. 128 (1962) 2614
20. Kozawa T., Kachi T., Kano H., Taga Y., and Hashimoto M. Raman Scattering from LO Phonon-Plasmon Coupled Modes in Gallium Nitride. J. Appl. Phys. 75 (1994) 1098
21. Lambrecht, W. R. L. (1997). "Band Structure of the Group-III Nitrides".
22. Lei T., Fanciulli M., Molnar R.J., Moustakas T.D., Graham R.J., and Scanlon J. Epitaxial Growth of Zincblende and Wurtzitic Gallium Nitride Thin Films on (001) Silicon. Appl. Phys. Lett. 59 (1991) 944
23. Lei T., Ludwig K.F., and Moustakas T.D. Heteroepitaxy, Polymorphism, and Faulting in GaN Thin Films on Silicon and Sapphire Substrates. J. Appl. Phys. 74 (1993) 4430
24. 2 Optical Phonons in GaN. Solid State Commun. 11 (1972) 1351
25. Leszczynski M., Suski T., Perlin P., Teisseyre H., Grzegory I., Bockowski M., Jun J., Porowski S., and Major J. Lattice Constants, Thermal Expansion and Compressibility of Gallium Nitride. J. Phys. D28 (1995) A149
26. Majewski J.A., and Vogl P. Simple Model for Structural Properties and Crystal Stability of sp-Bonded Solids. Phys. Rev. B35 (1987) 9666
27. Manchon D.D., Barker A.S., Dean P.J., and Zetterstrom R.B. Optical Studies of the Phonons and Electrons in Gallium Nitride. Solid State Commun. 8 (1970) 1227
28. Martin R.M. Relation Between Elastic Tensors of Wurtzite and Zinc-Blende Structure Materials. Phys. Rev. B6 (1972) 4546
29. Mattila T., Seitsonen A.P., and Niemenen R.M. Large Atomic Displacements Associated with Nitrogen Antisite in GaN. Phys. Rev. B54 (1996) 1454
30. Miwa K., and Fukomoto A. First-Principles Calculation of the Structural, Electronic. and Vibrational Properties of Gallium Nitride and Aluminum Nitride. Phys. Rev. B48 (1993) 7897
31. Mohammad S.N., and Morkoç H. Progress and Prospects of Group-III Nitride Semiconductors. Progr. Quant. Electr. 20 (1996) 361
32. Munoz A., and Kunc K. High-Pressure Phase of Gallium Nitride. Phys. Rev. B44 (1991) 10372
33. Murnaghan F.D. The Compressibility of Media Under Extreme Pressures. Proc. Natl. Acad. Sci. USA 30 (1944) 24
34. Murugkar S., Merlin R., Botchakar??? A., Salvador A., and Morkoç H. Second-Order Raman Spectroscopy of the wurtzite form of GaN. J. Appl. Phys. 77 (1995) 6042
35. Neugebauer J., and Van de Walle C.G. Theory of Point Defects and Complexes in GaN. Mat. Res. Symp. Proc. 395 (1996) 645
36. Paisley M.X., Sitar Z., Posthill J.B., and Davis R.F. Growth of Cubic Phase Gallium Nitride by Modified Molecular Beam Epitaxy. J. Vac. Sci. Technol. A7 (1989) 701
37. Perlin P., Camassel J., Knap W., Taliercio T., Chervin J.C., Suski T., Grzegory I., and Porowski S. Investigation of Longitudinal-Optical Phonon -Plasmon Coupled Modes in Highly Conducting Bulk GaN. Appl. Phys. Lett. 67 (1995) 2524
38. Perlin, P., Jauberthie-Carillon, C., Itie, J. P., San Miguel, A., Grzegory, I., and Polian, A. (1991). "High Pressure Phase Transition in Gallium Nitride". High Pressure Research 7-8, 96
39. Perlin P., Jauberthie-Carillon C., Itie J.P., San Miguel A., Grzegory I., and Polian A. Raman Scattering and X-ray Absorption Spectroscopy in Gallium Nitride Under High Pressure. Phys. Rev. B45 (1992) 83
40. Perlin, P., Suski, T., Teisseyre, H., Leszczynski, M., Grzegory, I., Jim, J., Porowski, S., Boguslawski, P., Bernholc, J., Chervin, J. C., Polian, A., and Moustakas, T. D. (1995).
41. Perlin, P., Suski, T., Polian, A., Chervin, J. C., Knap, W., Camassel, J., Grzegory, I., Porowski, S., and Erickson, J. W. (1996). "Spatial Distribution of Electron Concentration and Strain in Bulk GaN Single Crystals Relation to Growth Mechanism". In Proceedings of Fall MRS Meeting Boston, December.
42. Polian A., Grimsditch M., and Grzegory I. Elastic Constants of Gallium Nitride. J. Appl. Phys. 79 (1996) 3343
43. Powell R.C., Tomasch G.A., Kim Y.W., Thorton J.A., and Greene J.E. Growth of High-Resistivity Wurtzite and Zincblende Structure Single Crystal GaN by Reactive-Ion Molecular Beam Epitaxy. Mater. Res. Soc. Symp. Proc. 162 (1990) 525
44. Savastenko V.A., and Sheleg A.U. Study of the Elastic Properties of Gallium Nitride. Phys. Stat. Solidi A48 (1978) K135
45. Siegle H., Eckey L., Hoffmann A., Thomsen C., Meyer B.K., Schikora D., Hankeln M., and Lischka K. Quantative Determination of Hexagonal Minority Phase in Cubic GaN Using Raman Spectroscopy. Solid State Contmun. 96 (1995) 943
46. Strauss U., Tews H., Riechert H., Averbeck R., Schienle M., Jobst B., Volm D., Streibl T., Meyer B.K., and Rohle W.W. Identification of a Cubic Phase in Epitaxial Layers of Predominantly Hexagonal GaN. MRS Internet J. Nitride Semicond. Res. 1 (1996) 44
47. Strite S., Ruan J., Li Z., Manning N., Salvador A., Chen H., Smith D.J., Choyke W.J., and Morkoç H. An Investigation of the Properties of Cubic GaN Grown on GaAs by Plasma-Assisted Molecular-Beam Epitaxy. J. Vac. Sci. Technol. B9 (1991) 1924
48. Suski, T., Krueger, J., Kisielowski, C., Phatak, P., Leung, M. S. H., Lilienthal-Weber, Z., Gassman, A., Newman, N., Rubin, M. D., Weber, E. R., Grzegory, I., Jun, J., Bockowski, M. Porowski, S., and Helava, H. I. (1996). "Properties of Homoepitaxially MBE-Grown GaN". In Proceedings of MRS Spring Meeting, San Francisco.
49. Suski, T., Ruimov, S., Krueger, J., Conti, G., Weber, E. R., Bremser, N. D., Davis, R. F., and Kuo. C. (1996). "Internal Stress Effects in Si-Doped, Ge-Doped and Undoped Gallium Nitride Epitaxial Films". In Proceedings of MRS Fall Meeting, Boston, December.
50. Ueno M., Yoshida M., Onodera A., Shimomura O., and Takemura K. Stability of Wurtzite-Type Structure Under High Pressure: GaN, InN. Phys. Rev. B49 (1994) 14
51. Van Vechten J.A. Quantum Dielectric Theory of Electronegativity in Covalent Systems. I. Electronic Dielectronic Constant. Phys. Rev. 182 (1969) 891
52. Weinstein B.A. Phonon Dispersion of Zinc Chalcogenides Under Extreme Pressure and the Metallic Transformation. Solid State Commun. 24 (1977) 595
53. Xia H., Xia Q., and Ruoff A.L. High Pressure Structure of Gallium Nitride. Wurtzite to Rocksalt Phase Transition. Phys. Rev. B47 (1993) 12925