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Volumn 174, Issue 1, 2001, Pages 138-170

Recent advances in models for thermal oxidation of silicon

Author keywords

Continuum mechanics of solids; Diffusion; Finite elements; Level set methods; Thermodynamics of solids

Indexed keywords

FINITE ELEMENT METHOD; NUMERICAL METHODS; SILICA; SILICON; SILICON OXIDES; STRAIN; THERMODYNAMICS; THERMOOXIDATION;

EID: 0035923852     PISSN: 00219991     EISSN: None     Source Type: Journal    
DOI: 10.1006/jcph.2001.6884     Document Type: Article
Times cited : (27)

References (51)
  • 3
    • 0004308517 scopus 로고
    • Stress Effects in Silicon Oxidation-Simulation and Experiments
    • Ph.D. thesis (Stanford Univ.)
    • (1989)
    • Rafferty, C.S.1
  • 45
    • 0029405472 scopus 로고
    • Multiscale phenomena; Green's functions, the Dirichlet-to-Neumann formulation, subgrid scale models, bubbles and the origins of stabilized methods
    • (1995) Comp. Methods Appl. Mech. Eng , vol.127 , pp. 387
    • Hughes, T.J.R.1
  • 49
  • 50
    • 0030216527 scopus 로고    scopus 로고
    • An analysis of strong discontinuities in multiplicative finite strain plasticity and their relation with the numerical simulation of strain localization in solids
    • (1996) Int. J. Solids Struct , vol.33 , Issue.20-22 , pp. 2855
    • Armero, F.1    Garikipati, K.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.