In-situ stress measurements during dry oxidation of silicon

Materials Research Society Symposium - Proceedings

Volumn 473, Issue , 1997, Pages 95-100

  Yu, Chia Liang ^a   Flinn, Paul A ^a   Bravman, John C ^a  

^a STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MATHEMATICAL MODELS; OXIDATION; OXIDES; PRESSURE EFFECTS; STRESS ANALYSIS; STRESS RELAXATION; THERMAL EFFECTS; VISCOSITY;

DRY OXIDATION;

SEMICONDUCTING SILICON;

EID: 0031384883     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-473-95     Document Type: Conference Paper

References (15)