Three dimensional nonlinear viscoelastic oxidation modeling

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn , Issue , 1996, Pages 97-98

  Cea, S ^a   Law, M ^a  

^a UNIVERSITY OF FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ROAD CONSTRUCTION; SEMICONDUCTOR DEVICES; VISCOELASTICITY;

DEVICE ISOLATION; NONLINEAR STRESS; NONLINEAR VISCO-ELASTIC; OBJECT ORIENTED; OXIDATION MODEL; THREE DIMENSIONS; TWO-DIMENSION; TWO-STEP MODEL;

OXIDATION;

EID: 84887276906     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SISPAD.1996.865290     Document Type: Conference Paper

References (10)

1. D.B. Kao et al., IEEE Trans, on Electron Devices, p. 25, 1988.
2. P. Sutardja et al., IEEE Trans, on Electron Devices, p. 2415, 1989.
3. V. Senez et al., SISDEP Tech. Digest, p. 165, 1993.
4. J. P. Peng et al., COMPEL, p. 341, 1991
5. H. Umimoto et al., IEEE Trans. Comp. Aided Design, p. 599, 1990.
6. D. Collard et al., NUPAD IV Proceedings, p. 21, 1992.
7. S. Cea and M. Law, SISDEP Tech. Digest 1995, p 132.
8. C. S. Rafferty, PhD Thesis, Stanford Univ., 1989.
9. UMF user's manual, Tim Davis, Univ. of Florida.
10. P. Smeys et al., ECS Proceedings 1995, p. 94.