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Volumn 492, Issue 3, 2001, Pages 225-234
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Angle-resolved inverse photoemission of the (2×1)-reconstructed 3C-SiC(001) surface
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Author keywords
Inverse photoemission spectroscopy; Silicon carbide; Surface electronic phenomena (work function, surface potential, surface states, etc.)
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Indexed keywords
ELECTRON RESONANCE;
ENERGY GAP;
PHOTOEMISSION;
SURFACE PHENOMENA;
SURFACE STRUCTURE;
INVERSE PHOTOEMISSION SPECTROSCOPY;
SILICON CARBIDE;
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EID: 0035922862
PISSN: 00396028
EISSN: None
Source Type: Journal
DOI: 10.1016/S0039-6028(01)01452-2 Document Type: Article |
Times cited : (6)
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References (30)
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