Scanning tunneling microscopy evidence of background contamination-induced 2×1 ordering of the β-SiC(100) c(4×2) surface

Applied Surface Science

Volumn 166, Issue 1, 2000, Pages 220-223

  Douillard, L ^a   Fauchoux, O ^a   Aristov, V ^b   Soukiassian, P ^b  

^a CEA SACLAY   (France)

^b UNIVERSITÉ PARIS SACLAY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; CONTAMINATION; DIMERS; INTERFACES (MATERIALS); SCANNING TUNNELING MICROSCOPY; SENSITIVITY ANALYSIS;

ADSORBATE-INDUCED ELECTRONIC REDISTRIBUTIONS; ATOM-RESOLVED SCANNING TUNNELING MICROSCOPY;

SILICON CARBIDE;

EID: 0034300209     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(00)00421-9     Document Type: Article

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