Characteristics of Pt/SrBi 2Ta 2O 9/Y 2O 3/Si ferroelectric gate capacitors

Journal of the Korean Physical Society

Volumn 34, Issue 5, 1999, Pages 454-458

  Lee, Ho Nyung ^a,b   Kim, Yong Tae ^a   Choh, Sung Ho ^b  

^a Korea Institute of Science and Technology   (South Korea)

^b Korea University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000188680     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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