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Physical Review B - Condensed Matter and Materials Physics

Volumn 64, Issue 7, 2001, Pages 732021-732024

Nonequilibrium point defects and dopant diffusion in carbon-rich silicon

(3) Rucker H a Heinemann, B a Kurps, R a

a IHP (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONY; ARSENIC; BORON; CARBON; PHOSPHORUS; SILICON;

ARTICLE; CHEMICAL COMPOSITION; DENSITY; DIFFUSION; KINETICS; MATHEMATICAL MODEL; MEASUREMENT;

EID: 0035881791 PISSN: 01631829 EISSN: None Source Type: Journal
DOI: 10.1103/PhysRevB.64.073202 Document Type: Article

Times cited : (30)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.