Low-temperature heteroepitaxy by LEPECVD

Thin Solid Films

Volumn 318, Issue 1-2, 1998, Pages 11-14

  Rosenblad, C ^a   Deller, H R ^a   Dobeli M ^a   Muller E ^a   Von Kanel H ^a  

^a ETH ZURICH   (Switzerland)

Author keywords

Epitaxy; Plasma enhancement; Silicon germanium

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL ORIENTATION; LOW TEMPERATURE EFFECTS; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

LOW ENERGY PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION (LEPECVD); LOW TEMPERATURE HETEROEPITAXY;

EPITAXIAL GROWTH;

EID: 0032047033     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(97)01129-2     Document Type: Article

References (10)

1. T.O. Sedgwick et al., J. Electrochem. Soc 138 (1991) 3042.
2. B.S. Meyerson, K.J. Uram, F.K. LeGoues, Appl. Phys. Lett. 53 (1988) 2555.
3. S. Veprek et al., J. Vac. Sci. Technol. A 7 (1989) 2614.
4. M.V. Ramana Murty, H.A. Atwater, Nucl. Instr. and Meth. B 102 (1995) 293.
5. T. Ohmi, T. Ichikawa, H. Iwabuchi, T. Shibata, J. Appl. Phys. 66 (1989) 4756.
6. C. Rosenblad et al., to be published.
7. U. Kafader, H. Sirringhaus, H. von Känel, Appl. Surf. Sci. 90 (1995) 297.
8. N. Korner, Surf. Coating Technol. 76-77 (1995) 731.
9. M. Racanelli, D.W. Greve, J. Vac. Sci. Technol. B 9 (1991) 2017.
10. A. Sakai, T. Tatsumi, Appl. Phys. Lett. 64 (1994) 52.