Microstructural and interband transition properties of vertically stacked InAs/GaAs self-assembled quantum dots embedded in modulation-doped heterostructures

Applied Physics Letters

Volumn 79, Issue 1, 2001, Pages 33-35

  Kim, T W ^a   Lee, D U ^a   Choo, D C ^a   Kim, H J ^a   Lee, H S ^b   Lee, J Y ^b   Kim, M D ^c  

^a Kwangwoon University   (South Korea)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^c SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035796696     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1380239     Document Type: Article

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