Multilayer coating requirements for extreme ultraviolet lithography masks

Proceedings of SPIE-The International Society for Optical Engineering

Volumn 4562 II, Issue , 2001, Pages 863-882

  Hector, Scott D ^a   Gullikson, Eric M ^b   Mirkarimi, Paul ^c   Spiller, Eberhard ^c   Kearney, Patrick ^c   Folta, James ^c  

^a MOTOROLA INC   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

Author keywords

Error budgets; Extreme ultraviolet lithography; Mask blanks; Masks; Multilayer coatings

Indexed keywords

ERROR ANALYSIS; ION BEAM ASSISTED DEPOSITION; OPTICAL COATINGS; OPTICAL MULTILAYERS; OPTICAL SYSTEMS; PHOTOLITHOGRAPHY; SPUTTER DEPOSITION; ULTRAVIOLET RADIATION;

MULTILAYER COATINGS;

MASKS;

EID: 0035763623     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.458369     Document Type: Article

References (20)

1. Stephen P. Vernon, Patrick A. Kearney, William M. Tong, Shon Prisbrey, Cindy Larson, Craig E. Moore, Frank W. Weber, Greg Cardinale, Pei-Yang Yan, and Scott D. Hector, "Masks for extreme ultraviolet lithography," BACUS Symposium on Photomask Technology and Management, SPIE Vol. 3546, 1998, 184-93.
2. Daniel A. Tichenor, Glenn D. Kubiak, William C. Replogle, Leonard E. Klebanoff, John B. Wronosky, Layton C. Hale, Henry N. Chapman, John S. Taylor, James A. Folta, Claude Montcalm, Russell M. Hudyma, Kenneth A. Goldberg and Patrick Nauleau, "EUV Engineering Test Stand," Emerging Lithographic Technologies IV, Proceedings of SPIE, vol. 3997, 48-69 (2000).
3. th Annual SPIE Symposium on Photomask Technology and Management, SPIE Proceedings volume 4186, 2000, 733-48.
4. Gary Escher, "The importance of mask technical specifications on the lithography error budget," Photomask Technology and Management, SPIE vol. 2322, 409-20, 1994.
5. Eberhard Spiller, Soft X-Ray Optics, SPIE, Bellingham, WA, Chapter 7, 1994.
6. Troy W. Barbee, Jr., "Multilayers for x-ray optics," Applications of Thin-Film Multilayered Structures to Figured X-Ray Optics, SPIE vol. 563, 2-28, 1985.
7. B. Henke, E. Gullikson, and J. Davis, "X-Ray interactions: photoabsorption, scattering, transmission, and reflection at E=50-30,000 eV, Z=1-92," Atomic Data and Nuclear Data Tables, 54, 181-342, 1993. See also http://www-cxro.lbl.gov/optical_contants/.
8. David Attwood, Soft X-Rays and Extreme Ultraviolet Radiation: Principles and Applications, Cambridge University Press, Chapter 4, 1999.
9. V. Vinogradov and B.Ya. Zeldovich, "X-ray and far uv multilayer mirrors: Principles and possibilities," Applied Optics, vol 16, no. 1, 89-93, 1977.
10. J.H. Underwood and T.W. Barbee, Jr., "Layered synthetic microstructures as Bragg diffractors for X rays and extreme ultraviolet: theory and predicted performance," Applied Optics, vol. 20, no. 17, 3027-34, 1981.
11. E.M. Gullikson, S. Mrowka, and B.B. Kaufmann, "Recent Developments in EUV Reflectometry at the Advanced Light Source," Emerging Lithographic Technologies V, SPIE vol. 4343, (2001).
12. J.H. Underwood and E.M. Gullikson, "High-resolution, high-flux, users-friendly VLS beamline at the ALS for the 50-1300 eV energy region," Journal of Electron Spectroscopy and Related Phenomena, vol. 92, 265-72 (1998).
13. Weilun Chao, Eric Gullikson, and David Attwood, "Equivalent Multilayer Bandwidth and Comparison between 13.4 nm and 14.4 nm for EUV Throughput Calculation," Emerging Lithographic Technologies V, SPIE vol. 4343, (2001).
14. Regina Soufli, J. Courtney Davidsoon, R. Frederick Grabner, Eric M. Gullikson, Benjamin B. Kaufmann, Claude Montcalm, mark A. Schmidt, Eberhard Spiller, Sherry L. Baker, Henry N. Chapman, Russell Hudyma, Christopher C. Walton and James A. Folta, "Multilayer optics for an extreme ultraviolet lithography tool with 70 nm resolution," Emerging Lithographic Technologies V, SPIE vol. 4343, 51-9, (2001).
15. C.C. Walton, P.A. Kearney, P.B. Mirkarimi, J.M. Bowers, C. Cerjan, A.L. Warrick, K. Wilhelmsen, E. Fought, C. Moore, C. Larson, S. Baker, S.C. Burkhart, and S.D. Hector, "Extreme Ultraviolet Lithography-reflective mask technology," Emerging Lithographic Technologies IV, SPIE Proceedings vol. 3997, 2000, 496-507.
16. Kazuya Ota, Katsuhiko Murakami, Hiroyuki Kondo, Tetsuya Oshino, Katsumi Sugisaki and Hidecki Komatsude, "Feasibility study of EUV scanners," to be published in Emerging Lithographic Technologies V, SPIE vol. 4343, 51-9, (2001).
17. "Reflectometer measures EUV mask blanks," Research and Development, vol. 43, no. 7, 15, July 2001. See also http://www.euvl.com/.
18. Semiconductor Industry Association, 1999. See http://public.itrs.net/Files/2000UpdateFinal/2kUdFinal.htm.
19. S.P. Vernon, D.G. Stearns and R.S. Rosen, "Chirped multilayer coatings for increased x-ray throughput," Optics Letters, vol. 18, no. 9, 672-4, May 1993.
20. Katsuhiro Murakami, "Consideration of the intrafield reflectance uniformity of reflection mask blanks for EUVL," presented at XEL '99 in Yokohama, Japan, unpublished.