Equivalent multilayer bandwidth and comparison between 13.4 nm and 14.4 nm for EUV throughput calculation

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4343, Issue , 2001, Pages 676-683

  Chao, W ^a   Gullikson, E ^a   Attwood, D ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Bandwidth; EUV lithography; EUV Wavelengths; Mo Si; Multilayer; Optimization; Reflectivity; Throughput

Indexed keywords

APPROXIMATION THEORY; BANDPASS FILTERS; BANDWIDTH; BROADBAND NETWORKS; COMPUTER SIMULATION; LIGHT REFLECTION; MATHEMATICAL MODELS; MIRRORS; MULTILAYERS; OPTICAL SYSTEMS; OPTIMAL CONTROL SYSTEMS; PHOTONS; ULTRAVIOLET RADIATION; WAVELENGTH DIVISION MULTIPLEXING;

FULL WIDTH HALF MAXIMUM (FWHM);

PHOTOLITHOGRAPHY;

EID: 0034768497     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.436637     Document Type: Conference Paper

References (4)

1. Peak and integrated reflectivity, wavelength and gamma optimization of Mo/Si, and Mo/Be multilayer, multielement optics for extreme ultraviolet lithography
2. Multilayer reflective coatings for extreme-ultraviolet lithography
3. Multilayer optics for an extreme ultraviolet lithography tool with 70 nm resolution