Response of 100% internal quantum efficiency silicon photodiodes to 200 eV-40 keV electrons

IEEE Transactions on Nuclear Science

Volumn 44, Issue 6 PART 3, 1997, Pages 2561-2565

  Funsten, H O ^a   Suszcynsky, D M ^a   Ritzau, S M ^a   Korde, R ^a  

^a LOS ALAMOS NATIONAL LABORATORY   (United States)

Author keywords

Charge carrier processes; Dielectric radiation effects; Electron detectors; Electron radiation effects; Photodiodes; Radiation effects; Silicon radiation detectors

Indexed keywords

CHARGE CARRIERS; COMPUTER SIMULATION; ELECTRON BEAMS; MONTE CARLO METHODS; PARTICLE DETECTORS; QUANTUM EFFICIENCY; RADIATION EFFECTS;

SILICON RADIATION DETECTORS;

PHOTODIODES;

EID: 0031337901     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.650863     Document Type: Article

References (23)

1. R. Korde and J. Geist, "Quantum efficiency stability of silicon photodiodes," Appl. Opt., vol. 26, pp. 5284-5290, 1989.
2. R. Korde, J. S. Cable, and L. R. Canfield, "One gigarad passivating nitrided oxides for 100% internal quantum efficiency silicon photodiodes," IEEE Trans. Nucl. Sci., vol. 40, pp. 1655-1669, Dec. 1993.
3. L. R. Canfield, J. Kerner, and R. Korde, "Stability and quantum efficiency performance of silicon photodiode detectors in the far ultraviolet," Appl. Opt., vol. 28, no. 18, pp. 3940-3943, 1989.
4. R. Korde and L. R. Canfield, "Silicon photodiodes with stable, near theoretical quantum efficiency in the soft x-ray region," in Proc. SPIE, Symp. X-Ray Instrum. Medicine Biology, Plasma Phys., Astrophys., and Synchrotron Radiation, 1989, vol. 1140, pp. 126-132.
5. R. H. Pehl, F. S. Goulding, D. A. Landis, and M. Lenzlinger, "Accurate determination of the ionization energy in semiconduction detectors," in Semiconductor Nuclear-Particle Detectors and Circuits, W. L. Brown, W. A. Higinbotham, G. L. Miller, and R. L. Chase, Eds. Washington, DC: National Acad. Sci., 1969, pp. 19-36.
6. B. D. Wilkins, M. J. Fluss, S. B. Kaufman, C. E. Gross, and E. P. Steinberg, "Pulse-height defects for heavy ions in a silicon surface-barrier detector," Nucl. Instrum. Methods, vol. 92, pp. 381-391, 1971.
7. H. Funaki, M. Mashimo, M. Shimizu, Y. Oguri, and E. Aral, "Pulse height defect of low energy ions in surface barrier detectors," Nucl. Instrum. Methods Phys. Res. B, vol. 56, pp. 975-977, 1991.
8. C. J. Wu and D. B. Wittry, "Investigation of minority-carrier diffusion lengths by electron bombardment of Schottky barriers," J. Appl. Phys., vol. 49, no. 5, pp. 2827-2836, 1978.
9. H. J. Leamy, "Charge collection scanning electron microscopy," J. Appl. Phys., vol. 53, no. 6, pp. R51-R80, 1982.
10. D. B. Holt, "The conductive mode," in SEM Microcharacterization of Semi-Conductors, D. B. Holt and D. C. Joy, Eds. London, U.K.: Academic, 1989, pp. 241-338.
11. E. P. Steinberg, S. B. Kaufman, B. D. Wilkins, C. E. Cross, and M. J. Fluss, "Pulse height response characteristics for heavy ions in silicon surface-barrier detectors," Nucl. Instrum. Methods, vol. 99, pp. 309-320, 1972.
12. E. C. Finch, M. Asghar, and M. Forte, "Plasma and recombination effects in the fission fragment pulse height defect in a surface barrier detector," Nucl. Instrum. Methods, vol. 163, pp. 467-477, 1979.
13. M. Ogihara, Y. Nagashima, W. Galster, and T. Mikumo, "Systematic measurements of pulse height defects for heavy ions in surface-barrier detectors," Nucl. Instrum. Methods, vol. A251, pp. 313-320, 1986.
14. E. C. Finch, "Systematic measurements of pulse height defects for heavy ions in surface-barrier detectors - A comment," Nucl. Instrum. Methods, vol. A257, pp. 381-383, 1987.
15. D. C. Joy, Monte Carlo Modeling for Electron Microscopy and Microanalysis. New York: Oxford, 1995.
16. D. C. Joy and S. Luo, "An empirical stopping power relationship for low-energy electrons," Scanning, vol. 11, pp. 176-180, 1989.
17. R. H. Müller, "Interaction of beta particles with matter," Phys. Rev., vol. 93, pp. 891-892, 1954.
18. H. E. Bishop, "Some electron backscattering measurements," in X-Ray Optics and Microanalysis, R. Castaing, P. Deschamps, and J. Philibert, Eds. Paris: Hermann, 1966, vol. 4, pp. 153-158.
19. D. B. Wittry, "Secondary electron emission in the electron probe," in X-Ray Optics and Microanalysis, R. Castaing, P. Deschamps, and J. Philibert, Eds. Paris: Hermann, 1966, vol. 4, pp. 168-180.
20. K. F. J. Heinrich, "Electron probe microanalysis by specimen current measurement," in X-Ray Optics and Microanalysis, R. Castaing, P. Deschamps, and J. Philibert, Eds. Paris: Hermann, 1966, vol. 4, pp. 159-167.
21. H. Drescher, L. Reimer, and M. Seidel, "Rückstreukoeffizient und sekundärelektronen-ausbeute von 10-100 keV-elektronen und beziehungen zur raster-elektronenmikroskopie," Z. Angew. Phys., vol. 29, pp. 331-336, 1970.
22. H.-J. Hunger and L. Küchler, "Measurements of the electron backscattering coefficient for quantitative EPMA in the energy range of 4 to 40 keV," Phys. Status Solidi (a), vol. 56, pp. K45-K48, 1979.
23. L. Reimer and C. Tollkamp, "Measuring the back-scattered coefficient and secondary electron yield inside a scanning electron microscope," Scanning, vol. 3, pp. 35-39, 1980.