Pulse height defect of energetic heavy ions in ion-implanted Si detectors

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 405, Issue 1, 1998, Pages 39-44

  Pasquali, G ^a   Casini, G ^a   Bini, M ^a   Calamai, S ^a   Olmi, A ^a   Poggi, G ^a   Stefanini, A A ^a   Saint Laurent, F ^b   Steckmeyer, J C ^c  

^a UNIVERSITY OF FLORENCE   (Italy)

^b IRFM   (France)

^c UNIVERSITÉ DE CAEN   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ELECTRON ENERGY LEVELS; ELECTRON SCATTERING; ION IMPLANTATION; MOLYBDENUM; NIOBIUM; SILICON; TIN; XENON;

ENERGETIC HEAVY IONS; PULSE HEIGHT DEFECT; SILICON DETECTORS;

PARTICLE DETECTORS;

EID: 0032021296     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(97)01174-1     Document Type: Article

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