Annealing effects on electrical and structural properties of Al2O3 films deposited by ALD

Journal De Physique. IV : JP

Volumn 11, Issue 11, 2001, Pages

  Chang, Y ^a   Ducroquet, F ^a   Gosset, L G ^a   Sibai, A ^a   Dashtizadeh, V ^a   Damlencourt, J F ^a   Rolland, G ^a   Martin, F ^a  

^a CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COMPOSITION; CRYSTALLIZATION; ELECTRIC VARIABLES MEASUREMENT; FOURIER TRANSFORM INFRARED SPECTROSCOPY; INTERFACES (MATERIALS); PERMITTIVITY; THERMAL EFFECTS; THERMODYNAMIC STABILITY; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

ANNEALING EFFECTS; ATOMIC LAYER DEPOSITION; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; STRUCTURAL PROPERTIES;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0035711922     PISSN: 11554339     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)