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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 12, 2001, Pages 6845-6851

GaInAsP/InP distributed reflector lasers consisting of deeply etched vertical gratings

(8) Wiedmann, Jörg a Kim, Hyo Chang a Ebihara, Koji a Chen, Bo a Ohta, Masataka a Tamura, Shigeo a Shim, Jong In a Arai, Shigehisa a,b

a TOKYO INSTITUTE OF TECHNOLOGY (Japan)

b Hanyang University (South Korea)

Author keywords

Benzocyclobutene; CH4 H2 RIE; DBR laser; DFB laser; GaInAsP InP

Indexed keywords

DIFFRACTION GRATINGS; DISTRIBUTED FEEDBACK LASERS; ELECTRIC CURRENTS; ESTIMATION; ETCHING; LIGHT REFLECTION; QUANTUM EFFICIENCY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; WAVEGUIDES;

BENZOCYCLOBUTENE; DIFFERENTIAL QUANTUM EFFICIENCY; DISTRIBUTED BRAGG REFLECTOR; DISTRIBUTED REFLECTOR LASER; GALLIUM INDIUM ARSENIC PHOSPHIDE; SLAB WAVEGUIDE MODEL; SUBMODE SUPPRESSION RATIO; THRESHOLD CURRENT; VERTICAL GRATINGS;

SEMICONDUCTOR LASERS;

EID: 0035711540 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.40.6845 Document Type: Article

Times cited : (7)

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