Fabrication and performance of AlGaAs-GaAs distributed Bragg reflector lasers and distributed feedback lasers utilizing first-order diffraction gratings formed by a periodic groove structure

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 5, Issue 3, 1999, Pages 682-687

  Oku, Satoshi ^a,b,c   Ishii, Tetuyoshi ^a,d,e   Iga, Ryuzo ^a,f   Hirono, Takuo ^a,g  

^a NTT CORPORATION   (Japan)

^b KYOTO UNIVERSITY   (Japan)

^c Musashino Electrical Communication Lab   (Japan)

^d MURORAN INSTITUTE OF TECHNOLOGY   (Japan)

^e HOKKAIDO UNIVERSITY   (Japan)

^f OSAKA UNIVERSITY   (Japan)

^g WASEDA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BROMINE; DISTRIBUTED FEEDBACK LASERS; DRY ETCHING; ELECTRON BEAM LITHOGRAPHY; NITROGEN; OPTICAL PROPERTIES; REACTIVE ION ETCHING; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR QUANTUM WELLS;

DISTRIBUTED BRAGG REFLECTOR LASERS; PERIODIC GROOVE STRUCTURE; SURFACE GRATING;

DIFFRACTION GRATINGS;

EID: 0033124014     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.788435     Document Type: Article

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