Deeply etched semiconductor/benzocyclobutene distributed Bragg reflector laser combined with multiple cavities for 1.5-μm-wavelength single-mode operation

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 6 A, 2001, Pages 4031-4037

  Wiedmann, J ^a   Madhan, M ^a   Ebihara, K ^a   Matsui, K ^a   Tamura, S ^a   Arai, S ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Benzocyclobutene; CC laser; CH4 H2 RIE; DBR laser; GaInAsP InP

Indexed keywords

ELECTRIC CURRENTS; ETCHING; ORGANIC POLYMERS; SEMICONDUCTING GALLIUM COMPOUNDS;

BENZOCYCLOBUTENE; COUPLED CAVITY LASER; DISTRIBUTED BRAGG REFLECTOR; SUBMODE SUPPRESSION RATIO; THRESHOLD CURRENT; TRANSFER MATRIX METHOD;

SEMICONDUCTOR LASERS;

EID: 0035358660     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.4031     Document Type: Article

References (22)