1.5 μm wavelength DBR lasers consisting of 3λ/4-semiconductor and 3λ/4-groove buried with benzocyclobutene

Electronics Letters

Volumn 35, Issue 16, 1999, Pages 1335-1337

  Raj, M M ^a   Wiedmann, J ^a   Saka, Y ^a   Yasumoto, H ^a   Arai, S ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAVITY RESONATORS; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; ELECTROMAGNETIC WAVE DIFFRACTION; ELECTROMAGNETIC WAVE REFLECTION; MIRRORS; ORGANIC POLYMERS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE;

BENZOCYCLOBUTENE; CAVITY LENGTH; DIFFRACTION LOSS; LASING; OUTPUT POWER RATIO; SEMICONDUCTOR GROOVES; THRESHOLD CURRENT;

SEMICONDUCTOR LASERS;

EID: 0032643612     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19990907     Document Type: Article

References (7)

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