A novel short-cavity laser with deep-grating distributed bragg reflectors

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 2 SUPPL. B, 1996, Pages 1390-1394

  Baba, Toshihiko ^a   Hamasaki, Motoshi ^a   Watanabe, Nobuaki ^a   Kaewplung, Pasu ^a   Matsutani, Akihiro ^b   Mukaihara, Toshikazu ^b   Koyama, Fumio ^b   Iga, Kenichi ^b  

^a YOKOHAMA NATIONAL UNIVERSITY   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Distributed Bragg reflector; Electron beam lithography; Reactive ion beam etching; Semiconductor laser; Short cavity

Indexed keywords

DIFFRACTION GRATINGS; ELECTRON BEAM LITHOGRAPHY; MIRRORS; REACTIVE ION ETCHING; REFRACTIVE INDEX; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; SURFACE ROUGHNESS;

DISTRIBUTED BRAGG REFLECTORS; LASING OPERATION; REACTIVE ION BEAM ETCHING; SHORT CAVITY LASER; THRESHOLD CURRENT;

SEMICONDUCTOR LASERS;

EID: 0030080455     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.1390     Document Type: Article

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