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Volumn 9, Issue 7, 1997, Pages 881-883

Edge-emitting lasers with short-period semiconductor/air distributed bragg reflector mirrors

Author keywords

Semiconductor lasers

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DIFFRACTION GRATINGS; ELECTRIC CURRENT MEASUREMENT; HETEROJUNCTIONS; LIGHT MEASUREMENT; MIRRORS; REACTIVE ION ETCHING; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE TESTING; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

EID: 0031188107     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.593332     Document Type: Article
Times cited : (63)

References (11)
  • 1
    • 0000662378 scopus 로고
    • High speed digital modulation of ultralow threshold (<1 mA) GaAs single quantum laser without bias
    • K. Y. Lau and N. Bar-Chaim, "High speed digital modulation of ultralow threshold (<1 mA) GaAs single quantum laser without bias," Appl. Phys. Lett., vol. 51, no. 2, pp. 69-71, 1987.
    • (1987) Appl. Phys. Lett. , vol.51 , Issue.2 , pp. 69-71
    • Lau, K.Y.1    Bar-Chaim, N.2
  • 2
    • 0029393413 scopus 로고
    • Low thershold current density operation of GaInAsP-InP laser with multiple reflector microcavities
    • Oct.
    • K. Shin, M. Tamura, A. Kasukawa, N. Serizawa, S. Kurihashi, S. Tamura, and S. Arai, "Low thershold current density operation of GaInAsP-InP laser with multiple reflector microcavities," IEEE Photon. Technol. Lett., vol. 7, pp. 1119-1121, Oct. 1995.
    • (1995) IEEE Photon. Technol. Lett. , vol.7 , pp. 1119-1121
    • Shin, K.1    Tamura, M.2    Kasukawa, A.3    Serizawa, N.4    Kurihashi, S.5    Tamura, S.6    Arai, S.7
  • 4
    • 0001636444 scopus 로고
    • Characteristics of a two component chemically-assisted ion-beam etching technique for dry-etching of high-speed multiple quantum well laser mirrors
    • R. E. Sah, J. D. Ralston, S. Weisser, and K. Eisele, "Characteristics of a two component chemically-assisted ion-beam etching technique for dry-etching of high-speed multiple quantum well laser mirrors," Appl. Phys. Lett., 67(7), pp. 927-929, 1995.
    • (1995) Appl. Phys. Lett. , vol.67 , Issue.7 , pp. 927-929
    • Sah, R.E.1    Ralston, J.D.2    Weisser, S.3    Eisele, K.4
  • 6
    • 0030217387 scopus 로고    scopus 로고
    • 0.98 μm multiquantum well tunnelling injection lasers with ultra-high modulation bandwidths
    • X. Zhang, A. L. Gutierrez-Aitken, D. Klotzkin, P. Bhattacharya, C. Caneau, and R. Bhat, "0.98 μm multiquantum well tunnelling injection lasers with ultra-high modulation bandwidths," Electron. Lett., vol. 32, no. 18, pp. 1715-1716, 1996.
    • (1996) Electron. Lett. , vol.32 , Issue.18 , pp. 1715-1716
    • Zhang, X.1    Gutierrez-Aitken, A.L.2    Klotzkin, D.3    Bhattacharya, P.4    Caneau, C.5    Bhat, R.6
  • 7
    • 0031185346 scopus 로고    scopus 로고
    • Design studies for distributed Bragg reflectors for short cavity edge emitting lasers
    • submitted for publication
    • R. Jambunathan and J. Singh, "Design studies for distributed Bragg reflectors for short cavity edge emitting lasers," IEEE J. Quantum Electron., submitted for publication.
    • IEEE J. Quantum Electron.
    • Jambunathan, R.1    Singh, J.2
  • 9
    • 84941432651 scopus 로고
    • Frequency response of 1.3 μm InGaAsP high speed semiconductor lasers
    • R. Olshansky, P. Hill, V. A. Lanzisera, and W. Powazinik, "Frequency response of 1.3 μm InGaAsP high speed semiconductor lasers," IEEE J. Quantum Electron., vol. QE-23, p. 1410-1418, 1987.
    • (1987) IEEE J. Quantum Electron. , vol.QE-23 , pp. 1410-1418
    • Olshansky, R.1    Hill, P.2    Lanzisera, V.A.3    Powazinik, W.4
  • 11
    • 0030243213 scopus 로고    scopus 로고
    • Integrated external cavity for tunable devices
    • Sept.
    • R. Cameron and K. A. McGreer, "Integrated external cavity for tunable devices," IEEE Photon. Technol. Lett., vol. 8, pp. 1205-1207, Sept. 1996.
    • (1996) IEEE Photon. Technol. Lett. , vol.8 , pp. 1205-1207
    • Cameron, R.1    McGreer, K.A.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.