Mask substrate requirements and development for Extreme Ultraviolet Lithography (EUVL)

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3873, Issue pt 1, 1999, Pages 421-428

  Tong, William M ^a   Taylor, John S ^a   Hector, Scott D ^a   Shell, Melissa K ^a  

^a LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COATINGS; CRYSTAL DEFECTS; GLASS; LIGHT ABSORPTION; MULTILAYERS; PHOTOLITHOGRAPHY; REFLECTION; SILICON WAFERS; SUBSTRATES; SURFACE PROPERTIES; THERMAL EXPANSION; ULTRAVIOLET RADIATION;

COEFFICIENT OF THERMAL EXPANSION; EXTREME ULTRAVIOLET LITHOGRAPHY; MASK FORMAT; MASK MATERIAL; MASK SUBSTRATE;

MASKS;

EID: 0033333660     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.373338     Document Type: Conference Paper

References (6)