Development of highly accurate X-ray mask with high-density patterns

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 12 B, 1999, Pages 7071-7075

  Shimada, Masaru ^a   Tsuchizawa, Tai ^a   Uchiyama, Shingo ^a   Ohkubo, Takashi ^a   Itabashi, Seiichi ^b   Okada, Ikuo ^b   Ono, Toshiro ^a   Oda, Masatoshi ^a  

^a NTT CORPORATION   (Japan)

^b NTT Advanced Technology Corporation   (Japan)

Author keywords

ECR; Electron beam writing; Membrane process; Pattern placement accuracy; X ray lithography; X ray mask

Indexed keywords

DYNAMIC RANDOM ACCESS STORAGE; ELECTRON CYCLOTRON RESONANCE; MASKS; RUTHENIUM; SEMICONDUCTING FILMS; SILICON CARBIDE;

ELECTRON BEAM WRITING; X RAY MASK;

X RAY LITHOGRAPHY;

EID: 0033308387     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.7071     Document Type: Article

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