Study of different edge terminations used for 6H-SiC power diodes

Journal de Physique III

Volumn 7, Issue 4, 1997, Pages 809-818

  Ortolland, Sylvie ^a,b  

^a UNIVERSITÉ DE LYON   (France)

^b UPRESA CNRS N5005   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; ELECTRIC BREAKDOWN OF SOLIDS; ETCHING; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; SILICON CARBIDE;

JUNCTION DIODES; WIDE BANDGAP SEMICONDUCTORS;

SEMICONDUCTOR DIODES;

EID: 0031117807     PISSN: 11554320     EISSN: None     Source Type: Journal    
DOI: 10.1051/jp3:1997156     Document Type: Article

References (5)

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2. Alok D., Raghunathan R. and Baliga B.J., Planar Edge termination for 4H-Silicon Carbide Devices, IEEE Trans. on Electron Devices 43 (1996) 1315-1317.
3. Ruff M., Mitlehner H. and Helbig R., SiC devices: Physics and numerical simulations, IEEE Trans. on Electron Devices 41 (1994) 1040-1054.
4. Lanois F., Lassagne P., Planson D. and Locatelli M.L., Angle etch control for silicon carbide power devices, Appl. Phys. Lett. 69 (1996) 236-238.
5. + structures, J. Appl. Phys. 80 (1996) 5464-5468.