High voltage Schottky barrier diodes on p-type SiC using metal-overlap on a thick oxide layer as edge termination

Materials Research Society Symposium - Proceedings

Volumn 572, Issue , 1999, Pages 75-80

  Zhang, Q ^a   Madangarli, V ^a   Soloviev, S ^a   Sudarshan, T S ^a  

^a UNIVERSITY OF SOUTH CAROLINA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; CARRIER CONCENTRATION; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; ELECTRIC FIELD EFFECTS; ELECTRIC RESISTANCE; ENERGY GAP; HIGH TEMPERATURE OPERATIONS; SEMICONDUCTING SILICON COMPOUNDS; THERMAL CONDUCTIVITY;

BREAKDOWN FIELD; EDGE TERMINATION TECHNIQUE; REVERSE BREAKDOWN VOLTAGE;

SCHOTTKY BARRIER DIODES;

EID: 0033320447     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-572-75     Document Type: Conference Paper

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