Isoelectronic dopant induced ordering transition in GaInP grown by organometallic vapour phase epitaxy

Surface Science

Volumn 457, Issue 1, 2000, Pages

  Seong, T Y ^a   Lee, S M ^a   Lee, R T ^b   Stringfellow, G B ^b  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b UNIVERSITY OF UTAH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONY; CHEMICAL VAPOR DEPOSITION; METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS; SUBSTRATES; SURFACE ROUGHNESS; TRANSMISSION ELECTRON MICROSCOPY;

ISOELECTRONIC DOPANT; TRANSMISSION ELECTRON DIFFRACTION;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033682945     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(00)00404-0     Document Type: Article

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