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Volumn 233, Issue 4, 2001, Pages 667-672

Structural properties of Si and Mg doped and undoped Al0.13Ga0.87N layers grown by metalorganic chemical vapor deposition

Author keywords

A1. defect; A1. doping; A1. high resolution X ray diffraction; A3. metalorganic chemical vapor deposition; B1. nitrides; B2. semiconducting gallium compounds

Indexed keywords

DISLOCATIONS (CRYSTALS); LATTICE CONSTANTS; MAGNESIUM PRINTING PLATES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; STACKING FAULTS; SURFACE ACTIVE AGENTS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

EID: 0035546551     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)01627-X     Document Type: Article
Times cited : (7)

References (20)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.