Growth of germanium quantum dots on different dielectric substrates by chemical-vapor deposition

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 4, 2001, Pages 1104-1108

  Kim, Dong Won ^a   Kim, Young Hee ^a   Chen, Xiangdong ^a   Lee, Choong Ho ^a   Song, Seoung Chel ^a   Prins, Freek E ^a   Kwong, Dim Lee ^a   Banerjee, Sanjay ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; AUGER ELECTRON SPECTROSCOPY; CHEMICAL VAPOR DEPOSITION; DIELECTRIC MATERIALS; NUCLEATION; REACTION KINETICS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS; THERMAL EFFECTS; ULTRAHIGH VACUUM; X RAY PHOTOELECTRON SPECTROSCOPY;

GERMANIUM QUANTUM DOTS; NITRIDED OXIDE; OXYNITRIDATION;

SEMICONDUCTING GERMANIUM;

EID: 0035535231     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1387453     Document Type: Conference Paper

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