Surface smoothing and patterning of SiC by focused ion beams

Applied Surface Science

Volumn 136, Issue 1-2, 1998, Pages 1-7

  Menzel, R ^a   Bachmann, T ^a   Machalett, F ^a   Wesch, W ^a   Lang, U ^b   Wendt, M ^b   Musil, C ^c   Muhle R ^d  

^a FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

^b LEIBNIZ INSTITUTE OF PHOTONIC TECHNOLOGY   (Germany)

^c PAUL SCHERRER INSTITUTE   (Switzerland)

^d ETH ZURICH   (Switzerland)

Author keywords

Focused ion beam; SiC; Sputtering

Indexed keywords

ATOMIC FORCE MICROSCOPY; BINDING ENERGY; COMPUTER SIMULATION; GALLIUM; GOLD; INTERFACIAL ENERGY; ION BEAMS; ION BOMBARDMENT; ION IMPLANTATION; SPUTTERING; SURFACE ROUGHNESS; SWELLING;

FOCUSED ION BEAMS; SOFTWARE PACKAGE TRIM;

SILICON CARBIDE;

EID: 0032179559     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(98)00333-X     Document Type: Article

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